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| BSS126 SIPMOS(R) Small-Signal-Transistor Features * N-channel * Depletion mode * dv /dt rated * Available with VGS(th) indicator on reel * Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max I DSS,min 600 700 V 0.007 A PG-SOT-23 Type BSS126 0) BSS126 0) Package PG-SOT-23 PG-SOT-23 Ordering Code Q67042-S4300 Q67042-S4300 Tape and Reel Information E6327: 3000 pcs/reel E6906: 3000 pcs/reel sorted in V GS(th) bands1) Marking SHs SHs Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current I D,pulse T A=25 C I D=0.016 A, V DS=20 V, di /dt =200 A/s, T j,max=150 C Value 0.021 0.017 0.085 Unit A Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 0) 1) V GS 20 Class 1 V P tot T j, T stg T A=25 C 0.50 -55 ... 150 55/150/56 W C also available in non Pb-free on request see table on next page and diagram 11 Rev. 1.3 page 1 2006-06-14 BSS126 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 250 K/W Values typ. max. Unit Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current V (BR)DSS V GS=-5 V, I D=250 A V GS(th) I D(off) V DS=3 V, I D=8 A V DS=600 V, V GS=-5 V, T j=25 C V DS=600 V, V GS=-5 V, T j=125 C Gate-source leakage current On-state drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=25 V V GS=0 V, I D=3 mA V GS=10 V, I D=16 mA Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.01 A 600 -2.7 -2.0 -1.6 0.1 A V 7 0.008 320 280 0.017 10 100 700 500 S nA mA Threshold voltage V GS(th) sorted in bands2) J K L M N 2) V GS(th) V DS=3 V, I D=8 A -1.8 -1.95 -2.1 -2.25 -2.4 - -1.6 -1.75 -1.9 -2.05 -2.2 V Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.3 page 2 2006-06-14 BSS126 Parameter Symbol Conditions min. Dynamic characteristics I D=f(V GS); V DS=3 V; T j=25 C Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=-5 V, I F=16 mA, T j=25 C V R=300 V, I F=0.01 A, di F/dt =100 A/s 0.81 160 13.2 0.016 0.064 1.2 240 19.8 V ns nC A Q gs Q gd Qg V plateau V DD=400 V, I D=10 mA, V GS=-3 to 5 V 0.05 1.2 1.4 0.10 0.08 1.8 2.1 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=300 V, V GS=-3...7 V, I D=0.01 A, R G=6 V GS=-5 V, V DS=25 V, f =1 MHz 21 2.4 1.0 6.1 9.7 14 115 28 3.2 1.5 9.2 14.5 21 170 ns pF Values typ. max. Unit Rev. 1.3 page 3 2006-06-14 BSS126 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 0.6 0.025 0.5 0.02 0.4 0.015 P tot [W] 0.3 I D [A] 0.01 0.005 0 0 40 80 120 160 0 40 80 120 160 0.2 0.1 0 T A [C] T A [C] 3 Safe operating area I D=f(V GS); V DS=3 V; T j=25 C parameter: t p 10-1 10 s limited by on-state resistance 100 s 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 10-2 1 ms Z thJA [K/W] 10 ms I D [A] 0.5 10 2 0.2 0.1 0.05 0.02 0.01 single pulse DC 10-3 10-4 10 0 101 10 1 10 2 10 3 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev. 1.3 page 4 2006-06-14 BSS126 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 0.04 V 10 V1 V 0.5 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 1000 900 800 700 -0.2 V 0 V 0.1 V 0.2 V -0.1 V 0.5 V 0.03 V 0.2 V 0.1 V0 0.02 V 0.1V 0.2- R DS(on) [] 600 500 1V I D [A] 400 300 10 V 0.01 200 100 0 0 4 8 12 16 0 0 0.01 0.02 0.03 0.04 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); V DS=3 V; T j=25 C 8 Typ. forward transconductance g fs=f(I D); T j=25 C 0.025 0.025 0.02 0.02 0.015 0.015 0.01 g fs [S] 0.01 0.005 0 -2 -1 0 1 0 0.000 0.005 0.010 0.015 0.020 I D [A] 0.005 V GS [V] I D [A] Rev. 1.3 page 5 2006-06-14 BSS126 9 Drain-source on-state resistance R DS(on)=f(T j); I D= 0.016mA; V GS=0 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=3 V; I D = 8 A parameter: I D 1600 1400 -1.5 1200 1000 %98 -1 R DS(on) [] 800 600 400 200 0 -60 -20 %98 V GS(th) [V] -2 typ -2.5 %2 typ -3 -3.5 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Threshold voltage bands I D=f(V GS); V DS=3 V; T j=25 C 12 Typ. capacitances C =f(V DS); V GS=-3 V; f =1 MHz 0.1 100 Ciss 10 I D [mA] 0.01 8 A N M L K J C [pF] Coss 1 Crss 0.001 -2.5 -2 -1.5 -1 0.1 0 5 10 15 20 25 30 V GS [V] V DS [V] Rev. 1.3 page 6 2006-06-14 BSS126 13 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 0.1 150 C 25 C 15 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD 6 0.2 VDS(max) 0.5 VDS(max) 5 4 3 150 C, 98% 0.8 VDS(max) 25 C, 98% 2 V GS [V] I F [A] 0.01 1 0 -1 -2 -3 0.001 0 0.5 1 1.5 2 2.5 -4 0 0.4 0.8 1.2 1.6 V SD [V] Q gate [nC] 16 Drain-source breakdown voltage I D=f(V GS); V DS=3 V; T j=25 C 700 660 V BR(DSS) [V] 620 580 540 500 -60 -20 20 60 100 140 180 T j [C] Rev. 1.3 page 7 2006-06-14 BSS126 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.3 page 8 2006-06-14 BSS126 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81451 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 2006-06-14 |
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